是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP18,.3 |
针数: | 18 | Reach Compliance Code: | unknown |
风险等级: | 5.9 | Is Samacsys: | N |
最长访问时间: | 120 ns | I/O 类型: | SEPARATE |
JESD-30 代码: | R-PDIP-T18 | JESD-609代码: | e0 |
内存密度: | 1048576 bit | 内存集成电路类型: | FAST PAGE DRAM |
内存宽度: | 1 | 端子数量: | 18 |
字数: | 1048576 words | 字数代码: | 1000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX1 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP18,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | 5 V |
认证状态: | Not Qualified | 刷新周期: | 512 |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.04 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPD421000C-60 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-60L | NEC |
获取价格 |
暂无描述 | |
UPD421000C-70 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-70 | RENESAS |
获取价格 |
IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,PLASTIC | |
UPD421000C-70L | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-80 | RENESAS |
获取价格 |
1MX1 FAST PAGE DRAM, 80ns, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-80 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-80L | RENESAS |
获取价格 |
IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,PLASTIC | |
UPD421000C-80L | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000GX-10 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20 |