是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP18,.3 |
针数: | 18 | Reach Compliance Code: | unknown |
风险等级: | 5.9 | 最长访问时间: | 70 ns |
I/O 类型: | SEPARATE | JESD-30 代码: | R-PDIP-T18 |
JESD-609代码: | e0 | 内存密度: | 1048576 bit |
内存集成电路类型: | FAST PAGE DRAM | 内存宽度: | 1 |
端子数量: | 18 | 字数: | 1048576 words |
字数代码: | 1000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX1 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP18,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 512 | 最大待机电流: | 0.001 A |
子类别: | DRAMs | 最大压摆率: | 0.08 mA |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPD421000C-70L | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-80 | RENESAS |
获取价格 |
1MX1 FAST PAGE DRAM, 80ns, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-80 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000C-80L | RENESAS |
获取价格 |
IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,PLASTIC | |
UPD421000C-80L | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | |
UPD421000GX-10 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20 | |
UPD421000GX-10L | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20 | |
UPD421000GX-60 | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 60ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20 | |
UPD421000GX-60L | NEC |
获取价格 |
Fast Page DRAM, 1MX1, 60ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20 | |
UPD421000GX-70 | RENESAS |
获取价格 |
1MX1 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, TSOP1-24/20 |