5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 射频小信号双极晶体管> UPA814TF
UPA814TF PDF预览

UPA814TF

更新时间： 2024-01-03 04:47:00
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
1页 18K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

阅读下载

中文翻译

获取价格

UPA814TF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.1Is Samacsys：N
其他特性：LOW NOISE最大集电极电流 (IC)：0.1 A
基于收集器的最大容量：0.85 pF集电极-发射极最大电压：6 V
配置：SEPARATE, 2 ELEMENTS最高频带：L BAND
JESD-30 代码：R-PDSO-G6JESD-609代码：e6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：9000 MHz
Base Number Matches：1

UPA814TF 数据手册

  
NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
UPA814TF  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
•
•
SMALL PACKAGE OUTLINE:  
SOT-363 package measures just 2.0 mm x 1.25 mm  
PACKAGE OUTLINE TS06  
(Top View)  
LOW HEIGHT PROFILE:  
Just 0.60 mm high  
2.1 ± 0.1  
1.25 ± 0.1  
HIGH COLLECTOR CURRENT:  
IC MAX = 100 mA  
1
2
6
5
0.65  
+0.10  
- 0.05  
2.0 ± 0.2  
DESCRIPTION  
(All Leads)  
0.22  
1.3  
The UPA814TF contains two NE688 NPN high frequency  
siliconbipolarchips. NEC'snewlowprofileTFpackageisideal  
for all portable wireless applicatons where reducing compo-  
nent height is a prime consideration. Each transistor chip is  
independently mounted and easily configured for two stage  
cascade LNAs and other similar applications.  
3
4
0.6 ± 0.1  
0.45  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
0.13 ±0.05  
SYMBOLS  
VCBO  
VCEO  
VEBO  
IC  
PARAMETERS  
UNITS  
RATINGS  
0 ~ 0.1  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
9
6
Note:  
PIN OUT  
Pin 1 is the lower left most pin as  
the package lettering is oriented  
and read left to right.  
1. Collector Transistor 1  
2. Base Transistor 2  
3. Collector Transistor 2  
4. Emitter Transistor 2  
5. Emitter Transistor 1  
6. Base Transistor 1  
V
2
mA  
100  
PT  
Total Power Dissipation  
1 Die  
2 Die  
mW  
mW  
110  
200  
TJ  
Junction Temperature  
Storage Temperature  
°C  
°C  
150  
TSTG  
-65 to +150  
Note: 1.Operation in excess of any one of these parameters may  
result in permanent damage.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA814TF  
TS06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 5V, IE = 0  
µA  
µA  
0.1  
0.1  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
Forward Current Gain1 at VCE = 1 V, IC = 3 mA  
Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz  
80  
110  
9.0  
160  
fT  
GHz  
pF  
Cre  
|S21E|2  
0.75  
6.5  
0.85  
dB  
NF  
dB  
1.5  
hFE1 = Smaller Value of Q1, or Q2  
hFE2 = Larger Value of Q1 or Q2  
hFE1/hFE2  
hFE Ratio:  
0.85  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use  
part number UPA814TF-T1, 3K per reel.  
California Eastern Laboratories  
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS  
EXCLUSIVE NORTH AMERICAN AGENT FOR  
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279  
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM  
2/99  
DATA SUBJECT TO CHANGE WITHOUT NOTICE  
1

中文翻译

下载PDF

与UPA814TF相关器件

型号 品牌 获取价格 描述 数据表
UPA814TF-T1 ETC

获取价格

 		BJT
UPA814TKB ETC

获取价格

 		TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-363
UPA814T-KB NEC

获取价格

 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S
UPA814T-KB-A NEC

获取价格

 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S
UPA814T-T1 ETC

获取价格

 		BJT
UPA814T-T1-A CEL

获取价格

 		NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA814T-T1KB NEC

获取价格

 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA814T-T1KB-A NEC

获取价格

 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S
UPA8155 UTC

获取价格

 		class ab/d optional second generation class-d audi...
UPA81C NEC

获取价格

 		LED, LAMP DRIVER NPN SILICON EPTAXIAL DARLINGTON TRANSISTOR ARRAY

与UPA814TF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证