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UPA826TF-T1

更新时间： 2024-02-04 04:58:38
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 42K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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中文翻译

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UPA826TF-T1 技术参数

生命周期：Obsolete包装说明：PLASTIC, SO-6
Reach Compliance Code：unknown风险等级：5.67
其他特性：LOW NOISE最大集电极电流 (IC)：0.03 A
基于收集器的最大容量：0.7 pF集电极-发射极最大电压：6 V
配置：SEPARATE, 2 ELEMENTS最高频带：L BAND
JESD-30 代码：R-PDSO-G6元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：12000 MHz
Base Number Matches：1

UPA826TF-T1 数据手册

 浏览型号UPA826TF-T1的Datasheet PDF文件第2页浏览型号UPA826TF-T1的Datasheet PDF文件第3页浏览型号UPA826TF-T1的Datasheet PDF文件第4页浏览型号UPA826TF-T1的Datasheet PDF文件第5页浏览型号UPA826TF-T1的Datasheet PDF文件第6页 
PRELIMINARY DATA SHEET  
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
•
•
LOW NOISE AND HIGH GAIN  
OPERABLE AT LOW VOLTAGE  
SMALL FEEDBACK CAPACITANCE:  
Cre = 0.4 pF TYP  
Package Outline TS06 (Top View)  
2.1 ± 0.1  
1.25 ± 0.1  
•
SMALL PACKAGE STYLE:  
2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package  
1
2
6
5
0.65  
+0.10  
- 0.05  
2.0 ± 0.2  
0.22  
(All Leads)  
1.3  
DESCRIPTION  
3
4
The UPA826TF has two built-in low-voltage transistors which  
are designed for low-noise amplification in the VHF to UHF  
band. The two die are chosen from adjacent locations on the  
wafer. These features combined with the pin configuration  
make this device ideal for balanced or mirrored applications.  
This device is suitable for very low voltage/low current, and low  
noiseapplications. Thethinnerpackagestyleallowsforhigher  
density designs.  
0.6 ± 0.1  
0.45  
0.13 ± 0.05  
0 ~ 0.1  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
3. Collector (Q2)  
4. Base (Q2)  
Note:  
Pin 1 is the lower left most pin as  
the package lettering is oriented  
and read left to right.  
5. Emitter (Q2)  
6. Base (Q1)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA826TF  
TS06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
µA  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 5 V, IE = 0  
0.1  
0.1  
150  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
µA  
DC Current Gain1 at VCE = 3 V, IC = 10 mA  
75  
110  
12  
fT  
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz  
GHz  
pF  
Cre  
|S21E|2  
NF  
0.4  
8.5  
1.5  
0.7  
2.5  
dB  
7
dB  
hFE1/hFE2  
hFE Ratio, VCE = 3 V, Ic = 10 mA  
0.85  
1.0  
hFE1 = Smaller hFE value between Q1 and Q2  
hFE2 = Larger hFE value between Q1 and Q2  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with  
emitter connected to guard pin of capacitances meter.  
California Eastern Laboratories  
123456

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