UPA827TFFB

更新时间： 2024-09-30 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
16页	80K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPA827TFFB 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

PPA827TF

HIGH-FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2 u 2SC5179) THIN-TYPE SMALL MINI MOLD

FEATURES

PACKAGE DRAWINGS (Unit: mm)

•

High gain with low operating current

|S^21e|²= 9 dB TYP. @ V^CE= 2 V, I^C= 7 mA, f = 2 GHz

|S^21e|²= 8.5 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz

6-pin thin-type small mini mold package

2.10±0.1

1.25±0.1

•

Built-in 2 transistors (2 u 2SC5179)

ORDERING INFORMATION

Part Number

Quantity

Packing Style

PPA827TF

Loose products

(50 pcs)

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2

Emitter), Pin 4 (Q2 Base) face to

perforation side of the tape.

PPA827TF-T1

Taping products

(3 kpcs/reel)

Remark If you require an evaluation sample, please contact

an NEC Sales Representative.(Unit sample quantity

is 50 pcs).

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T^A= 25qC)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

P^T

30 in 1 element

60 in 2 element

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

ð65 to 150

Caution is required concerning excess input, such as from static electricity, due to the high-precision

fabrication processes used for this device.

The information in this document is subject to change without notice.

Document No. P12692EJ1V0DS00 (1st edition)

Date Published July 1997 N

Printed in Japan

1997

12 3 4 5 6 7...16

中文翻译

下载PDF

与UPA827TFFB相关器件

型号	品牌	获取价格	描述	数据表
UPA827TF-T1	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P
UPA827TF-T1-A	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA828	NEC	获取价格	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P
UPA828TC	ETC	获取价格	Discrete
UPA828TC-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA828TC-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA828TC-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA828TC-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA828TC-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA828TC-T1KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT