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UPA829TD-T3FB PDF预览

UPA829TD-T3FB

更新时间: 2024-02-08 00:01:17
品牌 Logo 应用领域
日电电子 - NEC 光电二极管晶体管
页数 文件大小 规格书
24页 116K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6

UPA829TD-T3FB 技术参数

生命周期:Obsolete包装说明:LEADLESS MINIMOLD PACKAGE-6
Reach Compliance Code:unknown风险等级:5.76
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.85 pF集电极-发射极最大电压:6 V
配置:SEPARATE, 2 ELEMENTS最高频带:L BAND
JESD-30 代码:R-PDSO-F6JESD-609代码:e6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

UPA829TD-T3FB 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA829TD  
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)  
IN A 6-PIN LEAD-LESS MINIMOLD  
FEATURES  
Low voltage operation, low noise  
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz  
NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz  
Built-in 2 transistors (2 × 2SC5437)  
6-pin lead-less minimold package  
BUILT-IN TRANSISTORS  
Q1, Q2  
3-pin thin-type ultra super minimold part No.  
2SC5437  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
10 kpcs/reel  
Supplying Form  
µPA829TD  
µPA829TD-T3  
• 8 mm wide embossed taping  
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P15357EJ1V0DS00 (1st edition)  
Date Published March 2001 NS CP(K)  
Printed in Japan  
2001  
©

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