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UPA831TF

更新时间： 2024-02-21 03:32:13
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
9页 60K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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UPA831TF 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.25其他特性：LOW NOISE
最大集电极电流 (IC)：0.065 A基于收集器的最大容量：0.9 pF
集电极-发射极最大电压：10 V配置：SEPARATE, 2 ELEMENTS
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：7000 MHzBase Number Matches：1

UPA831TF 数据手册

 浏览型号UPA831TF的Datasheet PDF文件第2页浏览型号UPA831TF的Datasheet PDF文件第3页浏览型号UPA831TF的Datasheet PDF文件第4页浏览型号UPA831TF的Datasheet PDF文件第5页浏览型号UPA831TF的Datasheet PDF文件第6页浏览型号UPA831TF的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
LOW NOISE:  
Package Outline TS06 (Top View)  
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA  
2.1 ± 0.1  
Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA  
1.25 ± 0.1  
•
HIGH GAIN:  
Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,  
lc = 7 mA  
1
2
6
5
0.65  
+0.10  
- 0.05  
2.0 ± 0.2  
0.22  
(All Leads)  
1.3  
Q2: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,  
lc = 7 mA  
3
4
•
•
6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE  
2 DIFFERENT BUILT-IN TRANSISTORS  
(Q1: NE856, Q2: NE681)  
0.6 ± 0.1  
0.45  
0.13 ± 0.05  
0 ~ 0.1  
DESCRIPTION  
Note:  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
3. Collector (Q2)  
4. Base (Q2)  
Pin 1 is the lower left most pin as  
the package lettering is oriented  
and read left to right.  
TheUPA831TFhastwodifferentbuilt-intransistorsforlowcost  
amplifierandoscillatorapplicationsintheVHF/UHFband. Low  
noise figures, high gain, high current capability, and medium  
output give this device high dynamic range with excellent  
linearity for two-stage amplifiers. This device is also ideally  
suited for use in a VCO/buffer amplifier application. The  
thinner package style allows for higher density designs.  
5. Emitter (Q2)  
6. Base (Q1)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA831TF  
TS06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
µA  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
1
1
µA  
DC Current Gain1 at VCE = 3 V, IC = 7 mA  
100  
3.0  
145  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
GHz  
pF  
4.5  
0.7  
9
Cre  
|S21E|2  
1.5  
2.5  
dB  
7
NF  
dB  
1.2  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
µA  
µA  
0.8  
0.8  
150  
DC Current Gain1 at VCE = 3 V, IC = 7 mA  
70  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
GHz  
pF  
4.5  
7.0  
0.45  
12  
Cre  
|S21E|2  
0.9  
2.7  
dB  
10  
NF  
dB  
1.4  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with  
emitter connected to guard pin of capacitances meter.  
California Eastern Laboratories  
1234567...9

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