UPA831TF(QI)

更新时间： 2024-01-20 14:27:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
16页	80K
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UPA831TF(QI) 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA831TC

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION

The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

UHF band.

FEATURES

•

Low noise

Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP.

@f = 1 GHz, V^CE= 3 V, I^C= 7 mA

High gain

Q1 : |S^21e|²= 9.0 dB TYP., Q2 : |S^21e|²= 12.0 dB TYP.

@f = 1 GHz, V^CE= 3 V, I^C= 7 mA

Flat-lead 6-pin thin-type ultra super minimold package

2 different built-in transistors (2SC5006, 2SC5007)

•

BUILT-IN TRANSISTORS

3-pin ultra super minimold part No.

2SC5006

2SC5007

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

µPA831TC

Flat-lead 6-pin

thin-type ultra

super minimold

Loose products

(50 pcs)

8 mm wide embossed tape.

Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation

side of the tape.

µPA831TC-T1

Taping products

(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA831TC.)

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14554EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...16

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