5秒后页面跳转
UPA831TFFB PDF预览

UPA831TFFB

更新时间: 2024-02-19 12:42:22
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
16页 80K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6

UPA831TFFB 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.25其他特性:LOW NOISE
最大集电极电流 (IC):0.065 A基于收集器的最大容量:0.9 pF
集电极-发射极最大电压:10 V配置:SEPARATE, 2 ELEMENTS
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):7000 MHzBase Number Matches:1

UPA831TFFB 数据手册

 浏览型号UPA831TFFB的Datasheet PDF文件第2页浏览型号UPA831TFFB的Datasheet PDF文件第3页浏览型号UPA831TFFB的Datasheet PDF文件第4页浏览型号UPA831TFFB的Datasheet PDF文件第5页浏览型号UPA831TFFB的Datasheet PDF文件第6页浏览型号UPA831TFFB的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA831TC  
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)  
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE  
DESCRIPTION  
The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to  
UHF band.  
FEATURES  
Low noise  
Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP.  
@f = 1 GHz, VCE = 3 V, IC = 7 mA  
High gain  
Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP.  
@f = 1 GHz, VCE = 3 V, IC = 7 mA  
Flat-lead 6-pin thin-type ultra super minimold package  
2 different built-in transistors (2SC5006, 2SC5007)  
BUILT-IN TRANSISTORS  
Q1  
Q2  
3-pin ultra super minimold part No.  
2SC5006  
2SC5007  
ORDERING INFORMATION  
Part Number  
Package  
Quantity  
Supplying Form  
µPA831TC  
Flat-lead 6-pin  
thin-type ultra  
super minimold  
Loose products  
(50 pcs)  
8 mm wide embossed tape.  
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation  
side of the tape.  
µPA831TC-T1  
Taping products  
(3 kp/reel)  
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:  
µPA831TC.)  
Caution Electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P14554EJ1V0DS00 (1st edition)  
Date Published November 1999 N CP(K)  
Printed in Japan  
©
1999  

与UPA831TFFB相关器件

型号 品牌 描述 获取价格 数据表
UPA831TFFB-T1 NEC RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil

获取价格

UPA831TF-T1 NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR

获取价格

UPA832 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI

获取价格

UPA832TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI

获取价格

UPA832TF(Q2) NEC RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili

获取价格

UPA832TF(QI) NEC RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic

获取价格