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UPA831TF-T1 PDF预览

UPA831TF-T1

更新时间： 2024-01-23 12:32:15
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
9页 60K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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UPA831TF-T1 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.1其他特性：LOW NOISE
最大集电极电流 (IC)：0.065 A基于收集器的最大容量：0.9 pF
集电极-发射极最大电压：10 V配置：SEPARATE, 2 ELEMENTS
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：7000 MHzBase Number Matches：1

UPA831TF-T1 数据手册

 浏览型号UPA831TF-T1的Datasheet PDF文件第2页浏览型号UPA831TF-T1的Datasheet PDF文件第3页浏览型号UPA831TF-T1的Datasheet PDF文件第4页浏览型号UPA831TF-T1的Datasheet PDF文件第5页浏览型号UPA831TF-T1的Datasheet PDF文件第6页浏览型号UPA831TF-T1的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
LOW NOISE:  
Package Outline TS06 (Top View)  
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA  
2.1 ± 0.1  
Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA  
1.25 ± 0.1  
•
HIGH GAIN:  
Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,  
lc = 7 mA  
1
2
6
5
0.65  
+0.10  
- 0.05  
2.0 ± 0.2  
0.22  
(All Leads)  
1.3  
Q2: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,  
lc = 7 mA  
3
4
•
•
6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE  
2 DIFFERENT BUILT-IN TRANSISTORS  
(Q1: NE856, Q2: NE681)  
0.6 ± 0.1  
0.45  
0.13 ± 0.05  
0 ~ 0.1  
DESCRIPTION  
Note:  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
3. Collector (Q2)  
4. Base (Q2)  
Pin 1 is the lower left most pin as  
the package lettering is oriented  
and read left to right.  
TheUPA831TFhastwodifferentbuilt-intransistorsforlowcost  
amplifierandoscillatorapplicationsintheVHF/UHFband. Low  
noise figures, high gain, high current capability, and medium  
output give this device high dynamic range with excellent  
linearity for two-stage amplifiers. This device is also ideally  
suited for use in a VCO/buffer amplifier application. The  
thinner package style allows for higher density designs.  
5. Emitter (Q2)  
6. Base (Q1)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA831TF  
TS06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
µA  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
1
1
µA  
DC Current Gain1 at VCE = 3 V, IC = 7 mA  
100  
3.0  
145  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
GHz  
pF  
4.5  
0.7  
9
Cre  
|S21E|2  
1.5  
2.5  
dB  
7
NF  
dB  
1.2  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
µA  
µA  
0.8  
0.8  
150  
DC Current Gain1 at VCE = 3 V, IC = 7 mA  
70  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
GHz  
pF  
4.5  
7.0  
0.45  
12  
Cre  
|S21E|2  
0.9  
2.7  
dB  
10  
NF  
dB  
1.4  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with  
emitter connected to guard pin of capacitances meter.  
California Eastern Laboratories  
1234567...9

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