生命周期: | Transferred | 包装说明: | LEAD FREE, LEADLESS, MINIMOLD, M16, 1208, 6 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.03 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 3 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 11000 MHz |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
UPA828TD-T3-A-FB | RENESAS | RF SMALL SIGNAL TRANSISTOR |
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UPA828TD-T3FB-A | NEC | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD, |
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UPA828TF | NEC | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P |
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UPA828TF_99 | NEC | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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UPA828TF-KB | NEC | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, MIN |
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UPA828TF-T1 | NEC | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P |
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