UPA828TF

更新时间： 2024-02-06 22:53:44

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
20页	92K
描述
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

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UPA828TF 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

PPA828TF

HIGH-FREQUENCY LOW-NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD

FEATURES

PACKAGE DRAWINGS (Unit: mm)

•

Low noise

2.10±0.1

1.25±0.1

NF = 1.3 dB TYP. @ V^CE= 2 V, I^C= 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

6-pin thin-type small mini mold package adopted

Built-in 2 transistors (2 u 2SC5184)

•

ORDERING INFORMATION

Part Number

Quantity

Packing Style

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2

Emitter), Pin 4 (Q2 Base) face to

perforation side of the tape.

PPA828TF

Loose products

(50 pcs)

PPA828TF-T1

Taping products

(3 kpcs/reel)

Remark If you require an evaluation sample, please contact

an NEC Sales Representative (Unit sample quantity

is 50 pcs).

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T^A= 25qC)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

Total Power Dissipation

P^T

90 in 1 element

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

180 in 2 elements

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

ð65 to +150

Caution is required concerning excess input, such as from static electricity, due to the high-precision

fabrication processes used for this device.

The information in this document is subject to change without notice.

Document No. P12693EJ1V0DS00 (1st edition)

Date Published July 1997 N

Printed in Japan

1997

12 3 4 5 6 7...20

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