UPA828TF

更新时间： 2024-01-23 17:10:03

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
20页	92K
描述
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

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中文翻译

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数据手册
替代型号

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UPA828TF 数据手册

PPA828TF

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I^CBO

Condition

MIN.

TYP.

MAX.

0.1

Unit

V^CB= 5 V, I^E= 0

V^EB= 1 V, I^C= 0

I^EBO

0.1

h^FE

V^CE= 2 V, I^C= 20 mA^{Note 1}

140

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Feedback Capacitance

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

f^T

V^CE= 2 V, I^C= 20 mA, f = 2 GHz

V^CE= 1 V, I^C= 10 mA, f = 2 GHz

V^CB= 2 V, I^E= 0, f = 1 MHz^{Note 2}

V^CE= 2 V, I^C= 20 mA, f = 2 GHz

V^CE= 1 V, I^C= 10 mA, f = 2 GHz

V^CE= 2 V, I^C= 3 mA, f = 2 GHz

V^CE= 1 V, I^C= 3 mA, f = 2 GHz

GHz

f^T

C^re

0.4

8.5

7.5

1.3

0.8

|S^21e|²

Noise Figure (2)

h^FERatio

h^FE1/h^FE2

V^CE= 2 V, I^C= 20 mA

0.85

h^FE1 = smaller h^FEvalue among Q1 and Q2

h^FE2 = larger h^FEvalue among Q1 and Q2

Notes 1. Pulse measurement P^Wd 350 Ps, Duty cycle d 2%

2. Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge

method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

Marking

h^FEvalue

R86

70 to 140

123 4 5 6 7...20

中文翻译

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UPA828TF 替代型号

型号	品牌	替代类型	描述	数据表
BFS481	INFINEON	功能相似	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector curre
BFS480	INFINEON	功能相似	NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication sys

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