Datasheet > UPA828TF-KB

UPA828TF-KB

更新时间： 2024-01-21 02:15:39

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
20页	92K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6

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UPA828TF-KB 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.47	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.8 pF
集电极-发射极最大电压：	3 V	配置：	SEPARATE, 2 ELEMENTS
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	9000 MHz

UPA828TF-KB 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

PPA828TF

HIGH-FREQUENCY LOW-NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD

FEATURES

PACKAGE DRAWINGS (Unit: mm)

•

Low noise

2.10±0.1

1.25±0.1

NF = 1.3 dB TYP. @ V^CE= 2 V, I^C= 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

6-pin thin-type small mini mold package adopted

Built-in 2 transistors (2 u 2SC5184)

•

ORDERING INFORMATION

Part Number

Quantity

Packing Style

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2

Emitter), Pin 4 (Q2 Base) face to

perforation side of the tape.

PPA828TF

Loose products

(50 pcs)

PPA828TF-T1

Taping products

(3 kpcs/reel)

Remark If you require an evaluation sample, please contact

an NEC Sales Representative (Unit sample quantity

is 50 pcs).

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T^A= 25qC)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

Total Power Dissipation

P^T

90 in 1 element

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

180 in 2 elements

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

ð65 to +150

Caution is required concerning excess input, such as from static electricity, due to the high-precision

fabrication processes used for this device.

The information in this document is subject to change without notice.

Document No. P12693EJ1V0DS00 (1st edition)

Date Published July 1997 N

Printed in Japan

1997

12 3 4 5 6 7...20

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与UPA828TF-KB相关器件

型号	品牌	描述	获取价格	数据表
UPA828TF-T1	NEC	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P	获取价格
UPA828TF-T1KB	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, MIN	获取价格
UPA829TC-FB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR	获取价格
UPA829TC-T1FB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR	获取价格
UPA829TD	ETC	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP	获取价格
UPA829TD-FB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M	获取价格

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