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UPA828TF-KB PDF预览

UPA828TF-KB

更新时间: 2024-02-18 21:23:16
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
20页 92K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6

UPA828TF-KB 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.47其他特性:LOW NOISE
最大集电极电流 (IC):0.03 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:3 V配置:SEPARATE, 2 ELEMENTS
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):9000 MHz

UPA828TF-KB 数据手册

 浏览型号UPA828TF-KB的Datasheet PDF文件第1页浏览型号UPA828TF-KB的Datasheet PDF文件第2页浏览型号UPA828TF-KB的Datasheet PDF文件第4页浏览型号UPA828TF-KB的Datasheet PDF文件第5页浏览型号UPA828TF-KB的Datasheet PDF文件第6页浏览型号UPA828TF-KB的Datasheet PDF文件第7页 
PPA828TF  
TYPICAL CHARACTERISTICS (TA = 25 qC)  
Total Power Dissipation vs. Ambient Temperature  
200  
Collector Current vs. DC Base Voltage  
50  
40  
30  
20  
10  
V
CE = 2 V  
2 Elements in Total  
180 mW  
Per Element  
90 mW  
100  
0
50  
100  
150  
0
0.5  
1.0  
Ambient Temperature T  
A
(˚C)  
DC Base Voltage VBE (V)  
Collector Current vs. Collector to Emitter Voltage  
DC Current Gain vs. Collector Current  
500  
25  
20  
200  
100  
µ
200  
A
180 µA  
V
CE = 2 V  
µ
µ
160  
140  
A
A
15  
120 µA  
50  
VCE = 1 V  
µ
A
µ
A
µ
A
100  
80  
60  
10  
5
20  
10  
40 µA  
= 20 µA  
I
B
0
1.0  
2.0  
3.0  
1
2
5
10  
20  
(mA)  
50  
100  
Collector Current I  
C
Collector to Emitter Voltage VCE (V)  
3

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