Datasheet > UPA829TC-T1FB

UPA829TC-T1FB

更新时间： 2024-02-22 08:28:20

品牌	Logo	应用领域
日电电子 - NEC		ISM频段光电二极管晶体管
页数	文件大小	规格书
22页	114K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA829TC-T1FB 技术参数

生命周期：	Obsolete	包装说明：	THIN, ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.76
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	0.85 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F6	JESD-609代码：	e6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	10	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	9000 MHz	Base Number Matches：	1

UPA829TC-T1FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA829TC

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Low voltage operation, low noise

NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

Built-in 2 transistors (2 × 2SC5437)

•

Flat-lead 6-pin thin-type ultra super minimold package

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5437

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

µPA829TC

µPA829TC-T1

• 8 mm wide embossed taping

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10113EJ01V0DS (1st edition)

Date Published March 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...22

下载PDF

与UPA829TC-T1FB相关器件

型号	品牌	描述	获取价格	数据表
UPA829TD	ETC	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP	获取价格
UPA829TD-FB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M	获取价格
UPA829TD-T3	ETC	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP	获取价格
UPA829TD-T3FB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M	获取价格
UPA829TF	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	获取价格
UPA829TF-T1	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, 2 X 1.25 M	获取价格