生命周期: | Obsolete | 包装说明: | THIN, ULTRA SUPER MINIMOLD PACKAGE-6 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 0.85 pF | 集电极-发射极最大电压: | 6 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA829TD | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP | |
UPA829TD-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA829TD-T3 | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP | |
UPA829TD-T3FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA829TF | NEC |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA829TF-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, 2 X 1.25 M | |
UPA82C | NEC |
获取价格 |
Small Signal Bipolar Transistor, 8-Element, NPN and PNP, Silicon, PLASTIC, DIP-18 | |
UPA831 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE | |
UPA831TC | CEL |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
UPA831TC | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE |