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UPA829TC-T1FB PDF预览

UPA829TC-T1FB

更新时间: 2024-02-28 13:51:55
品牌 Logo 应用领域
日电电子 - NEC ISM频段光电二极管晶体管
页数 文件大小 规格书
22页 114K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

UPA829TC-T1FB 技术参数

生命周期:Obsolete包装说明:THIN, ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Code:unknown风险等级:5.76
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.85 pF集电极-发射极最大电压:6 V
配置:SEPARATE, 2 ELEMENTS最高频带:L BAND
JESD-30 代码:R-PDSO-F6JESD-609代码:e6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

UPA829TC-T1FB 数据手册

 浏览型号UPA829TC-T1FB的Datasheet PDF文件第1页浏览型号UPA829TC-T1FB的Datasheet PDF文件第2页浏览型号UPA829TC-T1FB的Datasheet PDF文件第4页浏览型号UPA829TC-T1FB的Datasheet PDF文件第5页浏览型号UPA829TC-T1FB的Datasheet PDF文件第6页浏览型号UPA829TC-T1FB的Datasheet PDF文件第7页 
µPA829TC  
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
300  
1.0  
0.8  
0.6  
0.4  
0.2  
Mounted on Glass Epoxy PCB  
f = 1 MHz  
(1.08 cm2 × 1.0 mm (t) )  
250  
230  
2 Elements in total  
Per Element  
200  
150  
100  
50  
0
25  
50  
75  
100  
125  
(˚C)  
150  
1.0  
1.0  
0
2
4
6
8
10  
Ambient Temperature T  
A
Collector to Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
V
CE = 1 V  
V
CE = 2 V  
0.1  
0.1  
0.01  
0.001  
0.01  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage VBE (V)  
Base to Emitter Voltage VBE (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
100  
10  
1
80  
60  
40  
20  
V
CE = 3 V  
500  
450  
400  
350  
µ
A
µ
A
µ
A
µ
A
300  
µ
A
250  
µ
A
0.1  
200  
µ
A
µ
µ
0.01  
0.001  
150  
100  
A
A
I
B
= 50  
µ
A
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0
2
4
6
8
Base to Emitter Voltage VBE (V)  
Collector to Emitter Voltage VCE (V)  
3
Data Sheet PU10113EJ01V0DS  

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