5秒后页面跳转
UPA829TC-T1FB PDF预览

UPA829TC-T1FB

更新时间: 2024-02-14 19:36:46
品牌 Logo 应用领域
日电电子 - NEC ISM频段光电二极管晶体管
页数 文件大小 规格书
22页 114K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

UPA829TC-T1FB 技术参数

生命周期:Obsolete包装说明:THIN, ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Code:unknown风险等级:5.76
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.85 pF集电极-发射极最大电压:6 V
配置:SEPARATE, 2 ELEMENTS最高频带:L BAND
JESD-30 代码:R-PDSO-F6JESD-609代码:e6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

UPA829TC-T1FB 数据手册

 浏览型号UPA829TC-T1FB的Datasheet PDF文件第4页浏览型号UPA829TC-T1FB的Datasheet PDF文件第5页浏览型号UPA829TC-T1FB的Datasheet PDF文件第6页浏览型号UPA829TC-T1FB的Datasheet PDF文件第8页浏览型号UPA829TC-T1FB的Datasheet PDF文件第9页浏览型号UPA829TC-T1FB的Datasheet PDF文件第10页 
µPA829TC  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
20  
16  
12  
8
20  
MSG  
MAG  
MSG  
MAG  
16  
12  
8
2
|S21e  
|
2
|S21e  
|
4
0
4
0
V
CE = 1 V  
VCE = 2 V  
f = 1 GHz  
f = 1 GHz  
1
1
1
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
INSERTION POWER GAIN, MAG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG  
vs. COLLECTOR CURRENT  
16  
12  
16  
12  
8
V
CE = 1 V  
VCE = 2 V  
f = 2 GHz  
f = 2 GHz  
MAG  
MAG  
8
4
2
|S21e  
|
2
|S21e  
|
4
0
0
–4  
–4  
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
INSERTION POWER GAIN, MAG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
12  
8
12  
V
CE = 1 V  
VCE = 2 V  
f = 4 GHz  
f = 4 GHz  
8
MSG  
MAG  
MAG  
4
4
2
|S21e  
|
2
0
0
|S21e  
|
–4  
–8  
–4  
–8  
10  
Collector Current I  
100  
1
10  
Collector Current I (mA)  
100  
C
(mA)  
C
7
Data Sheet PU10113EJ01V0DS  

与UPA829TC-T1FB相关器件

型号 品牌 描述 获取价格 数据表
UPA829TD ETC TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP

获取价格

UPA829TD-FB NEC RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M

获取价格

UPA829TD-T3 ETC TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP

获取价格

UPA829TD-T3FB NEC RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M

获取价格

UPA829TF NEC NPN SILICON HIGH FREQUENCY TRANSISTOR

获取价格

UPA829TF-T1 NEC RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, 2 X 1.25 M

获取价格