Datasheet > UPA828TD-FB

UPA828TD-FB

更新时间： 2023-01-03 01:56:47

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	59K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD, M16, 1208, 6 PIN

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UPA828TD-FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

PA828TD

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)

FEATURES

•

Built-in low phase distortion transistor suited for OSC applications

f^T= 9.0 GHz TYP., S21e²= 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz

NF = 1.3 dB TYP. @ V^CE= 1 V, IC = 3 mA, f = 2 GHz

Built-in 2 transistors (2 × 2SC5436)

•

6-pin lead-less minimold (M16, 1208 package)

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5436

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA828TD

µPA828TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10402EJ02V0DS (2nd edition)

Date Published September 2003 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices 2003

12 3 4 5 6 7

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