Datasheet > UPA828TD-FB

UPA828TD-FB

更新时间： 2023-01-03 01:56:47

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	59K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD, M16, 1208, 6 PIN

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UPA828TD-FB 数据手册

µPA828TD

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

300

250

0.5

0.4

0.3

0.2

0.1

Mounted on Glass Epoxy PCB

f = 1 MHz

(1.08 cm²× 1.0 mm (t) )

200 2 Elements in total

180

150

Per Element

100

125

150

Ambient Temperature TA (˚C)

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

VCE = 1 V

VCE = 2 V

0.1

0.01

0.001

0.01

0.001

0.0001

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

500 A

450 A

400

300 A

350

250

200

150

100

IB = 50

Collector to Emitter Voltage VCE (V)

Remark The graphs indicate nominal characteristics.

Data Sheet PU10402EJ02V0DS

1 234 5 6 7

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