µPA828TD
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
5
3
V
2
30
V
mA
mW
Note
Total Power Dissipation
Ptot
90 in 1 element
180 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
Unit
nA
100
100
140
−
IEBO
VEB = 1 V, IC = 0 mA
−
−
nA
Note 1
hFE
VCE = 2 V, IC = 20 mA
70
7.0
9.0
6.0
7.0
−
−
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
fT
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
9.0
11.0
7.5
8.5
1.3
GHz
GHz
dB
−
S21e2
S21e2
NF
−
−
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
Noise Figure (2)
NF
−
1.3
2.0
dB
Note 2
Reverse Transfer Capacitance
hFE Ratio
Cre
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 2 V, IC = 20 mA,
hFE1 : Smaller value of Q1 and Q2,
hFE2 : Larger value of Q1 and Q2
−
0.4
0.8
pF
fT
0.85
−
−
−
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
kL
Marking
hFE Value
70 to 140
2
Data Sheet PU10402EJ02V0DS