Datasheet > UPA828TC-KB-A

UPA828TC-KB-A

更新时间： 2024-01-27 00:23:30

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
16页	78K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA828TC-KB-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.8 pF
集电极-发射极最大电压：	3 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	11000 MHz	Base Number Matches：	1

UPA828TC-KB-A 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA828TC

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Low phase distortion transistor suited for OSC applications

f^T= 9.0 GHz TYP., S^{21e 2}= 7.5 dB TYP. @ V^CE= 1 V, I^C= 10 mA, f = 2 GHz

NF = 1.3 dB @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

•

Built-in 2 transistors (2 × 2SC5436)

Flat-lead 6-pin thin-type ultra super minimold package

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5436

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

µPA828TC

µPA828TC-T1

• 8 mm wide embossed taping

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10167EJ01V0DS (1st edition)

Date Published June 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...16

下载PDF

与UPA828TC-KB-A相关器件

型号	品牌	描述	获取价格	数据表
UPA828TC-T1	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT	获取价格
UPA828TC-T1KB	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT	获取价格
UPA828TC-T1KB-A	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT	获取价格
UPA828TD-A	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEAD FREE	获取价格
UPA828TD-FB	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD,	获取价格
UPA828TD-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD,	获取价格