UPA821TF

更新时间： 2024-02-17 20:00:12

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
6页	43K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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UPA821TF 技术参数

生命周期：	Obsolete	包装说明：	THIN, MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.69
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	1.5 pF	集电极-发射极最大电压：	12 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4500 MHz
Base Number Matches：	1

UPA821TF 数据手册

PRELIMINARY DATA SHEET

NPN SILICON EPITAXIAL

TWIN TRANSISTOR

UPA821TF

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

LOW NOISE:

NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

Package Outline TS06

2.1 ± 0.1

HIGH GAIN:

1.25 ± 0.1

|S21E|²= 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

SMALL PACKAGE STYLE:

2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package

0.65

+0.10

- 0.05

2.0 ± 0.2

0.22

(All Leads)

1.3

DESCRIPTION

0.6 ± 0.1

0.45

The UPA821TF has two built-in low-voltage transistors which

are designed for low-noise amplification in the VHF to UHF

band. The two die are chosen from adjacent locations on the

wafer. These features combined with the pin configuration

make this device ideal for balanced or mirrored applications.

Lownoisefigures,highgain,andhighcurrentcapabilityequate

to wide dynamic range and excellent linearity. The thinner

package style allows for higher density designs.

0.13 ± 0.05

0 ~ 0.1

PIN CONFIGURATION (Top View)

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Note: Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA821TF

TS06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

1.0

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

1.0

DC Current Gain¹at VCE = 3 V, IC = 7 mA

140

Gain Bandwidth at VCE = 3 V, IC = 7 mA

GHz

3.0

4.5

0.7

Cre

|S21E|²

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

1.5

2.5

1.2

hFE1/hFE2

hFE ratio, VCE = 3 V, Ic = 7 mA

0.85

1.0

hFE1 = Smaller hFE value between Q1 and Q2

hFE2 = Larger hFE value between Q1 and Q2

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with

emitter connected to guard pin of capacitance meter.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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与UPA821TF相关器件

型号	品牌	获取价格	描述	数据表
UPA821TFFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA821TFFB-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA821TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA821TF-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA822TF	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA822TF-T1	NEC	获取价格	BJT
UPA826TC	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE
UPA826TC_01	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TC-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA826TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE

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