Datasheet > UPA826TC_01

UPA826TC_01

更新时间： 2024-09-30 03:57:03

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
3页	36K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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中文翻译

获取价格

数据手册

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UPA826TC_01 数据手册

PRELIMINARY DATA SHEET

NPN SILICON EPITAXIAL

TWIN TRANSISTOR

UPA826TC

DESCRIPTION

FEATURES

The UPA826TC contains two NE685 NPN high frequency

silicon bipolar chips. NEC's new ultra small TC package is

ideal for all portable wireless applications where reducing

board space is a prime consideration. Each transistor chip is

independently mounted and easily configured for oscillator

buffer amplifier and other applications.

•

SMALL PACKAGE STYLE:

1.5 mm x 1.1 mm, 33% smaller than conventional

SOT-363 package

•

LOW HEIGHT PROFILE:

Just 0.55 mm high

FLAT LEAD STYLE:

Reduced lead inductance improves electrical

performance

OUTLINE DIMENSIONS (Units in mm)

Package Outline TC

1.50±0.1

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

1.10±0.1

+0.1

0.20

-0.05

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

PIN OUT

1.50±0.1

0.48

1. Collector (T1)

2. Emitter (T1)

3. Collector (T2)

4. Base (T2)

5. Emitter (T2)

6. Base (T1)

0.96

Total Power Dissipation

1 Element

TBD

2 Elements

Junction Temperature

Storage Temperature

°C

150

+0.1

-0.05

0.11

TSTG

-65 to +150

0.55±0.05

Note: 1.Operation in excess of any one of these parameters

may result in permanent damage.

Note: Pin 1 is the lower left most pin

as the package lettering is oriented

and read left to right.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA826TC

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

0.1

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

0.1

DC Current Gain¹at VCE = 3 V, IC = 10 mA

110

150

Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz

GHz

Cre

|S21E|²

0.4

8.5

1.5

0.7

2.5

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with

emitter connected to guard pin of capacitance meter.

3. For tape and reel version, use part number UPA826TC-T1, 3K per reel.

California Eastern Laboratories

12 3

中文翻译

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与UPA826TC_01相关器件

型号	品牌	获取价格	描述	数据表
UPA826TC-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA826TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE
UPA826TC-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA826TF	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA826TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF-T1KB	NEC	获取价格	暂无描述
UPA827	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P
UPA827TF	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P
UPA827TFFB	NEC	获取价格	暂无描述

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