UPA826TC-T1

更新时间： 2024-09-29 22:21:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
12页	67K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

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中文翻译

获取价格

数据手册

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UPA826TC-T1 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA826TC

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 2 × 2SC5010)

FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Low noise and high gain

Operable at low voltage

Small feedback capacitance: C^re= 0.4 pF TYP.

Flat-lead 6-pin thin-type ultra super minimold package

Built-in 2 transistors (2 × 2SC5010)

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

µPA826TC

Flat-lead 6-pin

thin-type ultra

super minimold

Loose products

(50 pcs)

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation

side of the tape.

µPA826TC-T1

Taping products

(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA826TC. Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

T^Note

180 in 1 element

230 in 2 elements

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to 150

Note Mounted on 1.08 cm²× 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14553EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

1999

Printed in Japan

12 3 4 5 6 7...12

中文翻译

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