Datasheet > UPA826TC-KB

UPA826TC-KB

更新时间： 2024-01-31 01:55:55

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
12页	69K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

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中文翻译

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技术参数
数据手册

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UPA826TC-KB 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.29
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.7 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-F6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12000 MHz
Base Number Matches：	1

UPA826TC-KB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA826TC

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION

The µPA826TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to

the UHF band.

FEATURES

•

Low noise: NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 3 mA, f = 2 GHz

High gain: S^21e²= 8.5 dB TYP. @ V^CE= 3 V, I^C= 10 mA, f = 2 GHz

Low voltage operation

Small reverse transfer capacitance: C^re= 0.4 pF TYP.

Built-in 2 transistors (2 × 2SC5435)

Flat-lead 6-pin thin-type ultra super minimold package

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5435

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

µPA826TC

µPA826TC-T1

• 8 mm wide embossed taping

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14553EJ3V0DS00 (3rd edition)

Date Published May 2001 NS CP(K)

The mark • shows major revised points.

1999, 2001

Printed in Japan

12 3 4 5 6 7...12

中文翻译

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与UPA826TC-KB相关器件

型号	品牌	获取价格	描述	数据表
UPA826TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE
UPA826TC-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA826TF	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA826TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF-T1KB	NEC	获取价格	暂无描述
UPA827	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P
UPA827TF	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P
UPA827TFFB	NEC	获取价格	暂无描述
UPA827TF-T1	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P

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