生命周期: | Obsolete | 包装说明: | THIN, MINIMOLD PACKAGE-6 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 12 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA821TF-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic | |
UPA822TF | NEC |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA822TF-T1 | NEC |
获取价格 |
BJT | |
UPA826TC | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE | |
UPA826TC_01 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
UPA826TC-KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili | |
UPA826TC-T1 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE | |
UPA826TC-T1KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili | |
UPA826TF | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
UPA826TF-KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, |