Datasheet > UPA821TF-T1FB

UPA821TF-T1FB

更新时间： 2024-02-15 04:00:12

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
16页	80K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6

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中文翻译

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技术参数
数据手册

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UPA821TF-T1FB 技术参数

生命周期：	Obsolete	包装说明：	THIN, MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.69
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	1.5 pF
集电极-发射极最大电压：	12 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4500 MHz	Base Number Matches：	1

UPA821TF-T1FB 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

PPA821TF

HIGH-FREQUENCY LOW-NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2 u 2SC4226) THIN-TYPE SMALL MINI MOLD

The PPA821TF has 2 built-in low-voltage transistors which are

PACKAGE DRAWINGS (Unit: mm)

designed for low-noise amplification in the VHF to UHF band.

2.10±0.1

1.25±0.1

FEATURES

•

Low-noise

NF= 1.2 dBTYP.@ f = 1 GHz, V^CE= 3V, I^C= 7mA

•

High gain

IS²¹el²= 9.0 dBTYP. @ f = 1 GHz, V^CE= 3V, I^C= 7mA

6-pin thin-type small mini mold package adopted

Built-in 2 transistors (2 u 2SC4226)

•

ORDERING INFORMATION

Part Number

Quantity

Packing Style

Embossed tape 8 mm wide.

Pin 6 (Q1 Base),

Pin 5 (Q2 Emitter),

PPA821TF

Loose products

(50 pcs)

PPA821TF-T1

Taping products Pin 4 (Q2 Base) face to perfora-

tion side of the tape.

(3 kpcs/reel)

Remark If you require an evaluation sample, please contact

an NEC Sales Representative (unit sample quantity

is 50 pcs).

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T^A= 25qC)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

100

Total Power Dissipation

P^T

150 in 1 element

200 in 2 elements^Note

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

Junction Temperature

Storage Temperature

T^j

150

°C

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

T^stg

ð65 to 150

Note 110 mW must not be exceeded for 1 element.

Caution is required concerning excess input, such as from static electricity, due to the high-precision

fabrication processes used for this device.

The information in this document is subject to change without notice.

Document No. P12690EJ1V0DS00 (1st edition)

Date Published July 1997 N

Printed in Japan

1997

12 3 4 5 6 7...16

中文翻译

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与UPA821TF-T1FB相关器件

型号	品牌	获取价格	描述	数据表
UPA822TF	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA822TF-T1	NEC	获取价格	BJT
UPA826TC	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE
UPA826TC_01	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TC-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA826TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE
UPA826TC-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA826TF	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA826TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR

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