生命周期: | Obsolete | 包装说明: | 2 X 1.25 MM, SOT-363, 6 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.065 A |
基于收集器的最大容量: | 0.9 pF | 集电极-发射极最大电压: | 10 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 7000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA822TF-T1 | NEC |
获取价格 |
BJT | |
UPA826TC | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE | |
UPA826TC_01 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
UPA826TC-KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili | |
UPA826TC-T1 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE | |
UPA826TC-T1KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili | |
UPA826TF | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
UPA826TF-KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, | |
UPA826TF-T1 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
UPA826TF-T1KB | NEC |
获取价格 |
暂无描述 |