生命周期: | Transferred | 包装说明: | 2 X 1.25 MM, SOT-363, 6 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.85 pF |
集电极-发射极最大电压: | 6 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA814TKB | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-363 | |
UPA814T-KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S | |
UPA814T-KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S | |
UPA814T-T1 | ETC |
获取价格 |
BJT | |
UPA814T-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA814T-T1KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P | |
UPA814T-T1KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S | |
UPA8155 | UTC |
获取价格 |
class ab/d optional second generation class-d audi... | |
UPA81C | NEC |
获取价格 |
LED, LAMP DRIVER NPN SILICON EPTAXIAL DARLINGTON TRANSISTOR ARRAY | |
UPA821 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE |