是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, SO-6 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.85 pF |
集电极-发射极最大电压: | 6 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA814T-KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S | |
UPA814T-T1 | ETC |
获取价格 |
BJT | |
UPA814T-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA814T-T1KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P | |
UPA814T-T1KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, S | |
UPA8155 | UTC |
获取价格 |
class ab/d optional second generation class-d audi... | |
UPA81C | NEC |
获取价格 |
LED, LAMP DRIVER NPN SILICON EPTAXIAL DARLINGTON TRANSISTOR ARRAY | |
UPA821 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE | |
UPA821TC | NEC |
获取价格 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE | |
UPA821TC-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic |