UPA821

更新时间： 2024-02-21 11:16:34

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
12页	66K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

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中文翻译

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技术参数
数据手册

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UPA821 技术参数

生命周期：	Obsolete	包装说明：	THIN, MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.69
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	1.5 pF	集电极-发射极最大电压：	12 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4500 MHz
Base Number Matches：	1

UPA821 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA821TC

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 2 × 2SC5006)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION

The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to

UHF band.

FEATURES

•

Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, V^CE= 3 V, I^C= 7 mA

High gain: IS^21el²= 9.0 dB TYP. @ f = 1 GHz, V^CE= 3 V, I^C= 7 mA

Flat-lead 6-pin thin-type ultra super minimold package

Built-in 2 transistors (2 × 2SC5006)

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

µPA821TC

Flat-lead 6-pin

thin-type ultra

super minimold

Loose products

(50 pcs)

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation

side of the tape.

µPA821TC-T1

Taping products

(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA821TC. Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

100

T^Note

200 in 1 element

230 in 2 elements

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to 150

Note Mounted on 1.08 cm²× 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14552EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...12

中文翻译

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与UPA821相关器件

型号	品牌	获取价格	描述	数据表
UPA821TC	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE
UPA821TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA821TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE
UPA821TC-T1FB	NEC	获取价格	暂无描述
UPA821TF	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA821TFFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA821TFFB-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA821TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA821TF-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA822TF	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR

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