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UPA806T-T1 PDF预览

UPA806T-T1

更新时间: 2024-02-11 09:24:38
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管
页数 文件大小 规格书
8页 209K
描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

UPA806T-T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:MINIMOLD PACKAGE-6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.26
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.03 A基于收集器的最大容量:0.7 pF
集电极-发射极最大电压:6 V配置:SEPARATE, 2 ELEMENTS
最高频带:L BANDJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):12000 MHz
Base Number Matches:1

UPA806T-T1 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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