Datasheet > UPA2765T1A

UPA2765T1A

更新时间： 2024-09-13 12:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	150K
描述
N-channel MOSFET 30 V, 100 A, 1.3 m

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Data Sheet

μPA2765T1A

N-channel MOSFET

30 V , 100 A , 1.3 mΩ

R07DS0882EJ0102

Rev.1.02

Nov 28, 2012

Description

The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application.

Features

•

V_DSS= 30 V (T_A= 25°C)

Low on-state resistance

⎯ R_DS(on)= 1.3 mΩ MAX. (V_GS= 10 V, I_D= 46 A)

⎯ R_DS(on)= 2.9 mΩ MAX. (V_GS= 4.5 V, I_D= 32 A)

4.5 V Gate-drive available

Thin type surface mount package with heat spreader

Halogen free

•

8-pin HVSON(6051)

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

8-pin HVSON(6051)

μ PA2765T1A-E2-AY^∗

Pure Sn

Tape 3000 p/reel

0.1 g TYP.

Note: ^∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_DSS

V_GSS

I_D(DC)

±20

±100

±256

1.5

Drain Current (pulse) ^∗

I_D(pulse)

P_T1

P_T2

P_T3

T_ch

Total Power Dissipation ^∗

°C

Total Power Dissipation (PW = 10 sec) ^∗

Total Power Dissipation (T_C= 25°C)

Channel Temperature

4.6

150

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

I_AS

−55 to +150

E_AS

203

Thermal Resistance

Channel to Ambient Thermal Resistance ^∗2

R_th(ch-A)

R_th(ch-C)

83.3

1.5

°C/W

Channel to Case(Drain) Thermal Resistance

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

^∗3. Starting T_ch= 25°C, V_DD= 15 V, R_G= 25 Ω, V_GS= 20 → 0 V, L = 100 μH

R07DS0882EJ0102Rev.1.02

Nov 28, 2012

Page 1 of 6

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