Datasheet > UPA2791GR

UPA2791GR

更新时间： 2024-09-15 03:57:07

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
12页	242K
描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

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中文翻译

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UPA2791GR 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2791GR

SWITCHING

N- AND P-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The μ PA2791GR is N- and P-channel MOS Field Effect

Transistors designed for switching application.

: Source 1

: Gate 1

N-channel

P-channel

7, 8 : Drain 1

FEATURES

• Low on-state resistance

: Source 2

: Gate 2

5, 6 : Drain 2

N-channel R^DS(on)1= 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)

R^DS(on)2= 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

P-channel R^DS(on)1= 82 mΩ MAX. (VGS = −10 V, ID = −3.0 A)

R^DS(on)2= 110 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A)

• Low gate charge

6.0 0.3

4.4

5.37 MAX.

0.8

N-channel Q^G= 10 nC TYP. (VGS = 10 V)

P-channel Q^G= 8.3 nC TYP. (VGS = −10 V)

• Built-in gate protection diode

0.5 0.2

0.10

1.27 0.78 MAX.

+0.10

0.40

0.12 M

• Small and surface mount package (Power SOP8)

–0.05

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

Pure Sn

PACKING

PACKAGE

μ PA2791GR-E1-AT ^Note

μ PA2791GR-E2-AT ^Note

Tape 2500

p/reel

Power SOP8

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

EQUIVALENT CIRCUIT

N-channel

Drain

P-channel

Drain

Body

Diode

Gate

Protection

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge. V^ESD600 V TYP. (C = 100 pF, R = 1.5 kΩ)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18207EJ2V0DS00 (2nd edition)

Date Published November 2007 NS

Printed in Japan

2006, 2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...12

中文翻译

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与UPA2791GR相关器件

型号	品牌	获取价格	描述	数据表
UPA2791GR-E1-AT	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
UPA2791GR-E2-AT	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
UPA2792GR-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel
UPA2792GR-E2-AZ	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel
UPA2793AGR-E2-AT	RENESAS	获取价格	7A, 40V, 0.023ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER, SOP-8
UPA2793GR-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel,
UPA2793GR-E2-AZ	NEC	获取价格	Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel,
UPA2794GR-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 5.5A I(D), 60V, 0.033ohm, 2-Element, N-Channel and P-Channe
UPA2794GR-E2-AZ	NEC	获取价格	Power Field-Effect Transistor, 5.5A I(D), 60V, 0.033ohm, 2-Element, N-Channel and P-Channe
UPA2800T1L-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 17A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me

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