生命周期: | Transferred | 包装说明: | LEAD FREE, SOP-8 |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 2.5 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2791GR-E2-AT | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET | |
UPA2792GR-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel | |
UPA2792GR-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel | |
UPA2793AGR-E2-AT | RENESAS |
获取价格 |
7A, 40V, 0.023ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER, SOP-8 | |
UPA2793GR-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel, | |
UPA2793GR-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 40V, 0.023ohm, 2-Element, N-Channel and P-Channel, | |
UPA2794GR-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 60V, 0.033ohm, 2-Element, N-Channel and P-Channe | |
UPA2794GR-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 60V, 0.033ohm, 2-Element, N-Channel and P-Channe | |
UPA2800T1L-E1-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2800T1L-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me |