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UPA2792GR-E2-AZ

更新时间： 2024-11-04 20:01:35
品牌 Logo 应用领域
日电电子 - NEC ISM频段开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 232K
描述
Power Field-Effect Transistor, 10A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

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UPA2792GR-E2-AZ 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：LEAD FREE, SOP-8Reach Compliance Code：compliant
风险等级：5.72雪崩能效等级（Eas）：10 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：10 A最大漏源导通电阻：0.021 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3/e6元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM)：40 A
认证状态：Not Qualified表面贴装：YES
端子面层：MATTE TIN/TIN BISMUTH端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA2792GR-E2-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
μPA2792GR  
SWITCHING  
N- AND P-CHANNEL POWER MOS FET  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The μ PA2792GR is N- and P-channel MOS Field Effect  
8
5
Transistors designed for Motor Drive application.  
1
2
: Source 1  
: Gate 1  
N-channel  
P-channel  
FEATURES  
7, 8: Drain 1  
• Low on-state resistance  
3
4
: Source 2  
: Gate 2  
N-channel RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 5 A)  
RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 5 A)  
P-channel RDS(on)1 = 18 mΩ MAX. (VGS = −10 V, ID = −5 A)  
RDS(on)2 = 26 mΩ MAX. (VGS = −4.5 V, ID = −5 A)  
• Low input capacitance  
5, 6: Drain 2  
6.0 ±0.3  
4.4  
1
4
5.37 MAX.  
0.8  
N-channel Ciss = 2200 pF TYP.  
0.5 ±0.2  
P-channel Ciss = 2200 pF TYP.  
0.10  
1.27 0.78 MAX.  
• Built-in gate protection diode  
• Small and surface mount package (Power SOP8)  
+0.10  
0.40  
0.12 M  
–0.05  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Sn-Bi  
PACKING  
PACKAGE  
Power SOP8  
μ PA2792GR-E1-AZ Note  
μ PA2792GR-E2-AZ Note  
Tape 2500 p/reel  
Note Pb-free (This product does not contain Pb in external electrode).  
EQUIVALENT CIRCUITS  
N-channel  
P-channel  
Drain  
Drain  
Body  
Body  
Diode  
Diode  
Gate  
Gate  
Gate  
Gate  
Protection  
Diode  
Protection  
Diode  
Source  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G18592EJ1V0DS00 (1st edition)  
Date Published January 2007 NS CP(K)  
Printed in Japan  
2007  
1234567...12

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