Datasheet > UPA2811T1L

UPA2811T1L

更新时间： 2024-11-06 12:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	227K
描述
MOS FIELD EFFECT TRANSISTOR

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数据手册

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UPA2811T1L 数据手册

Preliminary Data Sheet

R07DS0191EJ0100

Rev.1.00

μ PA2811T1L

MOS FIELD EFFECT TRANSISTOR

Description

Jan 11, 2011

The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management

applications of portable equipment.

Features

•

V_DSS−30 V (T_A= 25°C)

Low on-state resistance

⎯ R_DS(on)= 15 mΩ MAX. (V_GS= −10 V, I_D= −19 A)

4.5 V Gate-drive available

Built-in gate protection diode

•

Small & thin type surface mount package with heat spreader (8-pin HVSON)

Halogen free and RoHS compliant

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

8-pin HVSON (3333)

μ PA2811T1L-E1-AY ^∗

μ PA2811T1L-E2-AY ^∗

Pure Sn

Tape 3000 p/reel

typ. 0.028 g

Note: ^∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

Ratings

−30

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_DSS

V_GSS

I_D(DC)

m25

m19

Drain Current (pulse) ^∗

I_D(pulse)

P_T1

P_T2

P_T3

T_ch

m76

Total Power Dissipation ^∗

1.5

°C

Total Power Dissipation (PW = 10 sec) ^∗

Total Power Dissipation (T_C= 25°C)

Channel Temperature

3.8

150

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

I_AS

−55 to +150

−19

E_AS

Thermal Resistance

Channel to Ambient Thermal Resistance ^∗2

R_th(ch-A)

83.3

2.4

°C/W

Channel to Case (Drain) Thermal Resistance R_th(ch-C)

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

^∗3. Starting T_ch= 25°C, V_DD= −15 V, R_G= 25 Ω, V_GS= −20 → 0 V, L = 100 μH

R07DS0191EJ0100 Rev.1.00

Jan 11, 2011

Page 1 of 6

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