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UPA2781GR-A

更新时间： 2024-09-15 21:03:35
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 63K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8

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UPA2781GR-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SOT包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：13 A最大漏源导通电阻：0.0172 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e6元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：52 A
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA2781GR-A 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA2781GR  
SWITCHING  
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The µPA2781GR is N-channel Power MOSFET, which built a  
Schottky Barrier Diode inside.  
8
5
1, 2, 3 : Source  
This product is designed for synchronous DC/DC converter  
application.  
4
: Gate  
5, 6, 7, 8: Drain  
FEATURES  
• Built a Schottky Barrier Diode  
6.0 ±0.3  
4.4  
1
4
• Low on-state resistance  
5.37 MAX.  
0.8  
RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A)  
RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A)  
RDS(on)3 = 12.9 mΩ TYP. (VGS = 4.0 V, ID = 7 A)  
• Low Ciss: Ciss = 900 pF TYP.  
0.5 ±0.2  
0.10  
1.27 0.78 MAX.  
+0.10  
–0.05  
• Small and surface mount package (Power SOP8)  
0.40  
0.12 M  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPA2781GR  
Power SOP8  
EQUIVALENT CIRCUIT  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) [MOSFET]  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
IF(AV)  
PT  
30  
V
V
±20  
Gate  
Schottky  
Diode  
±13  
A
Drain Current (pulse) Note1  
±52  
A
Average Forward Current Note2 [SCHOTTKY]  
Total Power Dissipation Note3 [MOSFET]  
Total Power Dissipation Note3 [SCHOTTKY]  
Channel & Junction Temperature  
Storage Temperature  
Gate  
Protection  
Diode  
2.5  
A
Source  
2
W
W
°C  
°C  
PT  
1
Tch, Tj  
Tstg  
150  
−55 to + 150  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Rectangle wave, 50% Duty Cycle  
3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G16420EJ1V0DS00 (1st edition)  
Date Published April 2003 NS CP(K)  
Printed in Japan  
2002  
123456

中文翻译

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