是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.029 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2782GR-A | NEC |
获取价格 |
暂无描述 | |
UPA2782GR-E1 | RENESAS |
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UPA2782GR-E1 | |
UPA2782GR-E1-AT | RENESAS |
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Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8, SOP, /Embossed Tape | |
UPA2782GR-E2 | RENESAS |
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UPA2782GR-E2 | |
UPA2782GR-E2-AT | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO | |
UPA2790GR | NEC |
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SWITCHING N- AND P-CHANNEL POWER MOS FET | |
UPA2790GR-A | RENESAS |
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6 A, 30 V, 0.04 ohm, N AND P-CHANNEL, Si, POWER, MOSFET, POWER, SO-8 | |
UPA2790GR-E1 | RENESAS |
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UPA2790GR-E1 | |
UPA2790GR-E2 | RENESAS |
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UPA2790GR-E2 | |
UPA2791GR | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |