Datasheet > UPA2782

UPA2782

更新时间： 2024-09-14 23:39:35

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UPA2782GR Data Sheet \| Data Sheet[04/2003]

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中文翻译

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UPA2782 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2782GR

SWITCHING

N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE

DESCRIPTION

The µPA2782GR is N-Channel Power MOSFET, which built a

PACKAGE DRAWING (Unit: mm)

Schottky Barrier Diode inside.

This product is designed for synchronous DC/DC converter

application.

1, 2, 3

; Source

; Gate

5, 6, 7, 8 ; Drain

FEATURES

• Built a Schottky Barrier Diode

• Low on-state resistance

6.0 ±0.3

4.4

R^DS(on)1= 11 mΩ TYP. (V^GS= 10 V, I^D= 5.5 A)

R^DS(on)2= 16 mΩ TYP. (V^GS= 4.5 V, I^D= 5.5 A)

R^DS(on)3= 19 mΩ TYP. (V^GS= 4.0 V, I^D= 5.5 A)

• Low C^iss: C^iss= 660 pF TYP.

5.37 MAX.

0.8

0.5 ±0.2

• Small and surface mount package (Power SOP8)

0.10

1.27 0.78 MAX.

+0.10

–0.05

0.40

0.12 M

ORDERING INFORMATION

PART NUMBER

PACKAGE

Power SOP8

µ PA2782GR

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C. All terminals are connected.)

EQUIVALENT CIRCUIT

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) [MOSFET]

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

I^F(AV)

P^T

±20

Drain

±11

Drain Current (pulse) ^Note1

±44

Average Forward Current ^Note2[SCHOTTKY]

Total Power Dissipation ^Note3[MOSFET]

Total Power Dissipation ^Note3[SCHOTTKY]

Channel & Junction Temperature

Storage Temperature

Gate

2.5

Schottky

Diode

°C

P^T

Gate

Protection

Diode

Source

T^ch, T^j

Tstg

150

−55 to + 150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Rectangle wave, 50% Duty Cycle

3. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16421EJ1V0DS00 (1st edition)

Date Published April 2003 NS CP(K)

Printed in Japan

2002

12 3 4 5 6

中文翻译

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与UPA2782相关器件

型号	品牌	获取价格	描述	数据表
UPA2782GR	RENESAS	获取价格	11A, 30V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8
UPA2782GR	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE
UPA2782GR-A	NEC	获取价格	暂无描述
UPA2782GR-E1	RENESAS	获取价格	UPA2782GR-E1
UPA2782GR-E1-AT	RENESAS	获取价格	Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8, SOP, /Embossed Tape
UPA2782GR-E2	RENESAS	获取价格	UPA2782GR-E2
UPA2782GR-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO
UPA2790GR	NEC	获取价格	SWITCHING N- AND P-CHANNEL POWER MOS FET
UPA2790GR-A	RENESAS	获取价格	6 A, 30 V, 0.04 ohm, N AND P-CHANNEL, Si, POWER, MOSFET, POWER, SO-8
UPA2790GR-E1	RENESAS	获取价格	UPA2790GR-E1

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