Datasheet > UNR6224(UN6224)

UNR6224(UN6224)

更新时间： 2024-11-20 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	103K
描述
Composite Device - Transistors with built-in Resistor

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数据手册

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UNR6224(UN6224) 数据手册

Transistors with built-in Resistor

UNR6221/6222/6223/6224

(UN6221/6222/6223/6224)

Silicon NPN epitaxial planer transistor

Unit: mm

For digital circuits

6.9±0.1

(4.0)

2.5±0.1

(0.8)

(0.7)

Features

■

Costs can be reduced through downsizing of the equipment and

0.65 max.

reduction of the number of parts.

■

MT-1 type package, allowing supply with the radial taping.

Resistance by Part Number

■

(R₁)

(R₂)

+0.10

0.45

–0.05

■

UNR6221

UNR6222

UNR6223

UNR6224

2.2kΩ

4.7kΩ

10kΩ

2.2kΩ

4.7kΩ

10kΩ

1.05±0.05

2.5±0.5

1 : Emitter

2 : Collector

3 : Base

MT-1-A1 Pakage

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Internal Connection

Collector to base voltage

Collector to emitter voltage

Collector current

500

˚C

Total power dissipation

Junction temperature

Storage temperature

P_T

600

T_j

150

T_stg

–55 to +150

˚C

Note) The Part numbers in the Parenthesis show conventional part number.

12 3 4 5 6

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