Datasheet > UNR7231

UNR7231

更新时间： 2024-11-24 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| 20V V(BR)CEO \| 700MA I(C) \| SC-62

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中文翻译

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数据手册

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UNR7231 数据手册

Transistors with built-in Resistor

UNR7231 (UN7231)

Silicon NPN epitaxial planer transistor

Unit: mm

For amplification of the low frequency

1.5 0.1

4.5 0.1

1.6 0.2

Features

High forward current transfer ratio h_FE

45°

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

0.4 0.08

0.4 0.04

0.5 0.08

1.5 0.1

3.0 0.15

Absolute Maximum Ratings (Ta=25˚C)

marking

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

1 : Emitter

2 : Collector

3 : Base

0.7

EIAJ : SC–62

Mini-Power Type Package

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

I_CP

1.5

P_T*

1.0

˚C

Marking Symbol: IC

Internal Connection

T_j

150

T_stg

–55 to +150

* Printed circuit board: Copper foil area of 1cm²or more and thickness of

1.7mm for the collector portion.

(

)

R1 1kΩ

47kΩ

(

)

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

V_CB= 15V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

I_CEO

V_CE= 15V, I_B= 0

0.5

Emitter cutoff current

I_EBO

V_EB= 14V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio

V_CBO

V_CEO

h_FE

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

V_CE= 10V, I_C= 150mA*

I_C= 500mA, I_B= 5mA*

V_CB= 20V, I_E= –20mA, f = 200MHz

800

2100

0.4

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

Input resistance

f_T

MHz

kΩ

R₁

0.7

1.3

Resistance ratio

R₁/R₂

0.016

0.021

0.025

*Pulse measurement

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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