Datasheet > TSM4N60

TSM4N60

更新时间： 2024-11-11 06:01:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
9页	474K
描述
600V N-Channel Power MOSFET

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TSM4N60 数据手册

TSM4N60

600V N-Channel Power MOSFET

TO-220

ITO-220

TO-251

(IPAK)

TO-252

(DPAK)

Pin Definition:

1. Gate

PRODUCT SUMMARY

2. Drain

3. Source

V_DS(V)

R_DS(on)(Ω)

I_D(A)

600

2.5 @ V_GS=10V

General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are

well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts

base on half bridge topology.

Block Diagram

Features

●

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

50pcs / Tube

TSM4N60CZ C0

TSM4N60CI C0

TSM4N60CH C5

TSM4N60CP RO

TO-220

ITO-220

TO-251

TO-252

50pcs / Tube

80pcs / Tube

N-Channel MOSFET

2.5Kpcs / 13” Reel

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Limit

600

±30

Unit

V_DS

V_GS

I_D

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

Single Pulse Drain to Source Avalanche Energy

(V_DD= 50V, I_AS=4A, L=27.5mH, R_G=25Ω), Starting T_J= 25^oC

Repetitive Avalanche Energy

EAS

EAR

dv/dt

240

(Pulse width limited by junction temperature)

Peak Diode Recovery dv/dt

4.5

V/ns

(I_SD≤ 4A, di/dt ≤ 200A/us, V_DD≤ B_VDSS) Starting T_J=25ºC

TO-220 / TO-251 / TO-252

ITO-220

Maximum Power Dissipation

@Ta = 25^oC

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 to +150

1/9

Version: A07

12 3 4 5 6 7...9

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