Datasheet > TSM4N70CPROG

TSM4N70CPROG

更新时间： 2024-11-12 01:09:31

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
9页	726K
描述
N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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TSM4N70CPROG 数据手册

TSM4N70

Taiwan Semiconductor

N-Channel Power MOSFET

700V, 3.5A, 3.3Ω

FEATURES

KEY PERFORMANCE PARAMETERS

●

High power and current handling capability

PARAMETER

VALUE

UNIT

Pb-free plating

V_DS

R_DS(on)(max)

Q_g

700

RoHS compliant

3.3

Halogen-free mold compound

APPLICATION

●

Power Supply

●

Lighting

TO-251

(IPAK)

TO-252

(DPAK)

ITO-220

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

LIMIT

PARAMETER

SYMBOL

UNIT

ITO-220 IPAK/DPAK

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

700

±30

T_C= 25°C

1.3

3.5

1.6

Continuous Drain Current ^{(Note 1)}

I_D

T_C= 100°C

Pulsed Drain Current ^{(Note 2)}

I_DM

P_DTOT

E_AS

Total Power Dissipation @ T_C= 25°C

Single Pulsed Avalanche Energy ^{(Note 3)}

Single Pulsed Avalanche Current ^{(Note 3)}

I_AS

3.5

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

THERMAL PERFORMANCE

LIMIT

PARAMETER

SYMBOL

UNIT

ITO-220 IPAK/DPAK

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJC

R_ӨJA

3.6

2.2

°C/W

Notes: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis determined by the user’s board

design. R_ӨJAshown below for single device operation on FR-4 PCB in still air

Document Number: DS_P0000167

Version: A15

12 3 4 5 6 7...9

中文翻译

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