Datasheet > TSM4N80_1310

TSM4N80_1310

更新时间： 2024-11-11 12:19:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
10页	446K
描述
800V N-Channel Power MOSFET

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TSM4N80_1310 数据手册

TSM4N80

800V N-Channel Power MOSFET

TO-220

ITO-220

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3. Source

800

3 @ V_GS=10V

General Description

The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half

bridge.

Block Diagram

Features

●

Low R_DS(ON)3Ω (Max.)

Low gate charge typical @ 25nC (Typ.)

●

Improve dv/dt capability

Ordering Information

Part No.

TSM4N80CZ C0

TSM4N80CI C0

Package

Packing

TO-220

ITO-220

50pcs / Tube

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

TO-220

ITO-220

Unit

Drain-Source Voltage

Gate-Source Voltage

800

±30

V_GS

Tc = 25^oC

Tc = 100^oC

4 *

Continuous Drain Current

I_D

2.5

2.5 *

16 *

4.5

Pulsed Drain Current *

I_DM

dv/dt

E_AS

I_AR

Peak Diode Recovery dv/dt (Note 3)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Repetitive) (Note 1)

Repetitive Avalanche Energy (Note 1)

E_AR

12.3

38.7

0.3

Tc = 25^oC

123

Power Dissipation

P_D

Derate above 25℃

0.98

ºC/W

Operating Junction Temperature

T_J

150

ºC

Storage Temperature Range

T_STG

-55 to +150

^oC

* Limited by maximum junction temperature

1/10

Version: C13

12 3 4 5 6 7...10

中文翻译

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