Datasheet > TSM4N90CIC0G

TSM4N90CIC0G

更新时间： 2024-11-11 12:49:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
10页	469K
描述
900V N-Channel Power MOSFET

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技术参数
数据手册

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TSM4N90CIC0G 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Is Samacsys：	N	Base Number Matches：	1

TSM4N90CIC0G 数据手册

TSM4N90

900V N-Channel Power MOSFET

TO-220

ITO-220

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3. Source

900

4 @ V_GS=10V

General Description

The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half

bridge.

Features

Block Diagram

●

Low R_DS(ON)4Ω (Max.)

Low gate charge typical @ 25nC (Typ.)

Improve dv/dt capability

Ordering Information

Part No.

TSM4N90CZ C0

TSM4N90CI C0G

Package

Packing

TO-220

50pcs / Tube

ITO-220

50pcs / Tube

Note: “G” denote for Halogen Free Product

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

TO-220

ITO-220

Unit

Drain-Source Voltage

Gate-Source Voltage

900

±30

V_GS

Tc = 25^oC

Tc = 100^oC

4 *

Continuous Drain Current

Pulsed Drain Current *

I_D

2.2

2.2 *

16 *

I_DM

dv/dt

E_AS

I_AR

Peak Diode Recovery dv/dt (Note 3)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Repetitive) (Note 1)

Repetitive Avalanche Energy (Note 1)

4.5

474

E_AR

12.3

Tc = 25^oC

123

38.7

0.3

Power Dissipation

P_D

Derate above 25℃

0.98

ºC/W

ºC

Operating Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55 to +150

^oC

* Limited by maximum junction temperature

1/10

Version: B13

12 3 4 5 6 7...10

中文翻译

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