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TSM4NB65CPROG PDF预览

TSM4NB65CPROG

更新时间: 2024-11-12 00:59:59
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
10页 1127K
描述
650V N-Channel Power MOSFET

TSM4NB65CPROG 数据手册

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TSM4NB65  
650V N-Channel Power MOSFET  
TO-220  
ITO-220  
Pin Definition:  
1. Gate  
Key Parameter Performance  
2. Drain  
3. Source  
Parameter  
VDS  
Value  
650  
Unit  
V
RDS(on) (max)  
Qg  
3.37  
Ω
13.46  
nC  
TO-251  
(IPAK)  
TO-252  
(DPAK)  
Application  
Block Diagram  
Power Supply.  
Lighting  
Ordering Information  
Part No.  
Package  
Packing  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
75pcs / Tube  
2.5kpcs / 13Reel  
TSM4NB65CZ C0  
TSM4NB65CZ C0G  
TSM4NB65CI C0  
TSM4NB65CI C0G  
TSM4NB65CH C5G  
TSM4NB65CP ROG  
TO-220  
TO-220  
ITO-220  
ITO-220  
TO-251  
TO-252  
N-Channel MOSFET  
Note: “G” denotes for Halogen- and Antimony-free as those which  
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br  
+ Cl) and <1000ppm antimony compounds  
Absolute Maximum Ratings (TC = 25unless otherwise noted)  
Limit  
Parameter  
Symbol  
Unit  
IPAK/DPAK  
ITO-220  
650  
±30  
4
TO-220  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
V
Tc = 25℃  
A
Continuous Drain Current (Note 1)  
ID  
2.4  
Tc = 100℃  
A
Pulsed Drain Current (Note 2)  
IDM  
EAS  
PTOT  
TJ  
A
16  
Single Pulse Avalanche Energy (Note 3)  
Total Power Dissipation @ TC = 25℃  
Operating Junction Temperature  
Storage Temperature Range  
31.2  
25  
mJ  
W
50  
70  
-55 to +150  
-55 to +150  
TSTG  
1/10  
Version: C14  

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