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TSM4ND50 PDF预览

TSM4ND50

更新时间: 2024-11-11 05:55:51
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TSC /
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8页 699K
描述
500V N-Channel Power MOSFET

TSM4ND50 数据手册

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TSM4ND50  
500V N-Channel Power MOSFET  
TO-252  
Pin Definition:  
1. Gate  
PRODUCT SUMMARY  
2. Drain  
3. Source  
VDS (V)  
RDS(on)(Ω)  
ID (A)  
500  
2.7 @ VGS =10V  
1.5  
General Description  
The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.  
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half  
bridge.  
Features  
Block Diagram  
Low gate charge typical @ 12nC  
Low Crss typical @ 10pF  
Fast Switching  
100% avalanche tested  
Improved dv/dt capability  
ESD Protection  
Ordering Information  
Part No.  
Package  
TO-252  
Packing  
TSM4ND50CP RO  
2,500pcs / 13” Reel  
N-Channel MOSFET  
Absolute Maximum Rating (Ta=25oC unless otherwise noted)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
500  
±30  
3
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Continuous Drain Current  
A
Pulsed Drain Current  
IDM  
12  
A
Continuous Source Current (Diode Conduction)  
Peak Diode Recovery (Note 2)  
IS  
3
A
dv/dt  
4.5  
V/ns  
Single Pulse Drain to Source Avalanche Energy (Note 3)  
Total Power Dissipation @TC=25oC  
EAS  
120  
45  
mJ  
W
PDTOT  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
oC  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
2.78  
100  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
Notes: Surface mounted on FR4 board t 10sec  
RӨJA  
1/8  
Version: B08  

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